2006. 1. 13 1/7 semiconductor technical data khb2d0n60p1/f1 n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for switching mode power supplies. features v dss = 600v, i d = 2.0a drain-source on resistance : r ds(on) =5.0 @v gs = 10v qg(typ.) = 10.9nc maximum rating (tc=25 ) * : drain current limited by maximum junction temperature. g d s characteristic symbol rating unit khb2d0n60p1 KHB2D0N60F1 drain-source voltage v dss 600 v gate-source voltage v gss 30 v drain current @t c =25 i d 2.0 2.0* a @t c =100 1.2 1.2* pulsed (note1) i dp 8.0 8.0* single pulsed avalanche energy (note 2) e as 120 mj repetitive avalanche energy (note 1) e ar 5.4 mj peak diode recovery dv/dt (note 3) dv/dt 5.5 v/ns drain power dissipation tc=25 p d 54 23 w derate above25 0.43 0.18 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 2.32 5.5 /w thermal resistance, case-to-sink r thcs 0.5 - /w thermal resistance, junction-to- ambient r thja 62.5 62.5 /w dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 dim millimeters to-220is a a b b c c d d e e f f g g h h 1.47 max 13.0 max j j k k l l m mm n n o o p q q 123 1. gate 2. drain 3. source 3.18 0.1 + _ 0.8 0.1 + _ 3.3 0.1 + _ 0.5 0.1 + _ 10.16 0.2 + _ 15.87 0.2 + _ 12.57 0.2 + _ 2.54 0.2 + _ 2.54 0.2 + _ 2.76 0.2 + _ 6.68 0.2 + _ 4.7 0.2 + _ 3.23 0.1 + _ 6.5 p
2006. 1. 13 2/7 khb2d0n60p1/f1 revision no : 0 electrical characteristics (tc=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.65 - v/ drain cut-off current i dss v ds =600v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =1.0a - 3.8 5.0 dynamic total gate charge q g v ds =480v, i d =2.0a v gs =10v (note4,5) - 10.9 12 nc gate-source charge q gs - 1.7 3 gate-drain charge q gd - 5.0 5.5 turn-on delay time t d(on) v dd =300v r l =150 r g =25 (note4,5) - - 28 ns turn-on rise time t r - - 60 turn-off delay time t d(off) - - 58 turn-off fall time t f - - 66 input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 388 504 pf reverse transfer capacitance c rss - 6.5 8.5 output capacitance c oss - 46 59.4 source-drain diode ratings continuous source current i s v gs 2006. 1. 13 3/7 khb2d0n60p1/f1 revision no : 0 gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 -1 10 0 10 1 10 -1 10 -2 10 0 10 1 10 0 10 -1 68 410 2 i d - v gs r ds(on) - i d drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) i s - v sd 0.2 0.4 0.8 1.0 1.2 1.4 1.6 0.6 reverse drain current i s (a) 0 10 12 6 2 4 8 024 135 v gs = 20v v gs = 10v source - drain voltage v sd (v) 25 c 150 c 150 c 25 c -55 c 10 0 10 -1 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5v normalized breakdown voltage bv dss bv dss - t j r ds(on) - t j -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 junction temperture t j ( ) 0 50 -100 -50 100 150 normalized on resistance junction temperature tj ( ) c 0.0 0.5 2.5 1.0 1.5 2.0 c v gs = 0v i ds = 250 v gs = 10v i ds = 2.0a
2006. 1. 13 4/7 khb2d0n60p1/f1 revision no : 0 drain current i d (a) gate - charge q g (nc) c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 10 6 2 4 8 410 28 6 0 q g - v gs safe operation area capacitance (pf) gate - source voltage v gs (v) 0 200 600 400 100 500 700 300 frequency = 1mhz drain current i d (a) drain - source voltage v ds (v) safe operation area 10 0 10 1 10 -2 10 -1 10 1 10 -1 10 0 10 0 10 1 10 0 10 -2 10 -1 10 1 10 2 10 3 dc 100 s 10 s 1 s 100 s 0.0 2.0 1.2 0.4 0.8 1.6 75 150 125 50 100 25 drain current i d (a) v ds = 120v v ds = 300v v ds = 480v 10 1 10 0 10 2 10 3 c junction temperature t j ( ) i d - t j i d =2.0a t c = 25 t j = 150 single nonrepetitive pulse c c operation in this area is limited by r ds(on) operation in this area is limited by r ds(on) 100 s 10 s 1 s dc t c = 25 t j = 150 single nonrepetitive pulse c c (khb2d0n60p1) (KHB2D0N60F1) c oss c iss c rss
2006. 1. 13 5/7 khb2d0n60p1/f1 revision no : 0 square wave pulse duration (sec) transient thermal impedance 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 transient thermal impedance c [ /w ] {khb2d0n60p1} single pulse duly=0.5 0 .02 0.05 0.1 0.2 0.01 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm square wave pulse duration (sec) transient thermal impedance 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 transient thermal impedance c [ /w ] {KHB2D0N60F1} single pulse duly=0.5 0.02 0.05 0.1 0.2 0 . 01 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm
2006. 1. 13 6/7 khb2d0n60p1/f1 revision no : 0 - gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p - resistive load switching - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 0.5 v dss 0.5 v dss 0.8 v dss
2006. 1. 13 7/7 khb2d0n60p1/f1 revision no : 0 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss
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